Power_electronics Features

Optimized High-Voltage Diodes - issue 6/2018
In the constant quest for smaller sizes, better performance and lower costs, Dean technology, Inc (DTI) has developed a new technology for producing high voltage diodes that enables the future of the...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Electronics Europe Events
December 6, 2018 - March 29, 2019

ECPE presents the draft programme for the Workshop 'SiC & GaN User Forum: Potential of Wide Bandgap Semiconductors in Power Electronic Applications' taking place in Erding near Munich Airport on 26 - 27 March 2019.  


  • ECPE SiC & GaN User Forum 'Potential of Wide Bandgap Semiconductors in Power Electronic Applications'
    26 - 27 March 2019, Erding / Munich, Germany
    Chairmen: Prof. A. Lindemann (Univ. of Magdeburg), Prof. L. Lorenz (ECPE), Dr. P. Friedrichs (Infineon)
    in conjunction with the ECPE Annual Event

    Since more than 12 years the biannual ECPE Wide Bandgap User Forum has given advise and support to the introduction and the usage of SiC and GaN devices in power electronic systems. Major progress has been achieved, with today a multitude of SiC diodes and transistors being available and used in series products. For those, special aspects gain importance, such as robustness or qualification when exposed to demanding mission profiles. On the other hand still some more basic research and development work is dedicated to high voltage SiC and also GaN devices and their applications. These actual topics will be addressed during the upcoming 8th ECPE Wide Bandgap User Forum:

Further tutorials and workshops in 2019:

  • ECPE Tutorial 'Wide Bandgap User Training'
    26 - 27 February 2019, Graz, Austria
    Chairmen: Prof. E. Hoene (Fraunhofer IZM), Prof. N. Kaminski (Univ. of Bremen)


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