Features
Power_electronics Features

A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
More details...
Power Electronics Europe Events
 
ISPSD 2022 in Vancouver/Canada Call for Papers
September 21, 2021 - December 30, 2021

The International Symposium on Power Semiconductor Devices and ICs (ISPSD) is one of the premier forums for technical discussions in all areas of power semiconductor devices and power integrated circuits. The conference venue rotates annually through regions of the world and 2022 marks a return to Canada after an absence of more than 20 years. ISPSD 2022 will be held in Vancouver, Canada at the waterfront Marriott Pinnacle Downtown Hotel from May 22 - 26.

Topics of interest include, but are not limited to:

 

  • High Voltage Power Devices (HV): High voltage silicon based discrete devices (> 200V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes.

  • Low Voltage Devices and Power IC Technology (LVT): Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges.

  • Power IC Design (ICD): Circuit design and demonstration using power IC technology platform.

  • GaN and Compound Materials: Device and technology (GaN): GaN and compound materials (e.g. AlN, Ga2O3, GaAs) based power devices, technology and integration, materials, and processing.

  • SiC and Other Materials: SiC and other material (e.g. Ga2O3, diamond) based power devices, technology and integration, materials, and processing.

  • Module and Package Technologies (PK): Module and package technology for discrete power devices and power ICs.

The Call for Papers is already out, requirements for abstract submissions are:

 

  • A single-page text summary in English (500 words maximum).

  • Up to two additional pages of supporting figures.

  • Heading must include: Title, Authors, Affiliations, Address, Email.

  • The abstract must CLEARLY state: purpose of work, how the work advances prior art, specific results and their significance, up-to-date references.

  • Mark the paper’s eligibility for the Charitat Award during submission (paper for which the first author is not more than 30 years of age at the time of the conference). To be eligible, the first author must also present the paper at ISPSD 2022.

Abstract submission deadline is Dec 10, 2021

Author notification sent out by Feb 04, 2022

Late news submission (limited acceptance) Mar 11, 2022

Final manuscripts must be submitted before Mar 25, 2022

 


General Chair: Prof. Wai Tung Ng

University of Toronto, Canada

ngwt@vrg.utoronto.ca

 

Technical Program Chair: Dr. David Sheridan

Alpha & Omega Semiconductor, USA

david.sheridan@us.aosmd.com

 

www.ispsd2022.com

 
Go Back   
Newsletter sign up

Sponsors