Semiconductor Materials Features

Features

Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In...
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Renewable Energies Push Power Electronics
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
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Semiconductor Materials Features

The next stage in the commercialism of GaN-based power devices	May, 18 2010
With the first commercially viable GaN based power device released into production, a new stage of implementation of this transformational technology is taking place.......
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Application considerations for the Silicon Carbide MOSFETs	May, 18 2010
The SiC MOSFET has definitive advantages over Silicon switching devices. Howver, it's unique operating characteristics need to be carefully considered to fully realise these advantages. The gate driver needs to be capable of providing 20V drive with minimum output and high curent capapbility....
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GaN Based Power Devices: Cost-Effective Revolutionary Performance	December, 02 2008
A novel gallium nitride (GaN) based power device platform promises to deliver figure-of-merit (FOM) performance that is at least an order of magnitude better than existing silicon MOSFETs.
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Characterization of Power Devices at Wafer Level	June, 18 2007
Power Semiconductor test - Characterization of Power Devices at Wafer Level. PEE Issue 6 2007
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Prospects of IGCT Technology	June, 01 2007
High Power Semiconductors - Prospects of IGCT Technology. Issue 6 2007
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Soft-Start Control of Electric Motors	January, 16 2007
Motor Control-Soft-Start Control of Electric Motors. Issue 1 2007
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