Features
Power_electronics Features

Using FREDFETs in BLDC motor drivers to overcome thermal challenges - issue 1/2019
A recent IHS report suggests that the global market for brushless DC (BLDC) motors in home applications is set to rise from around 430 million units per year to 750 million units per year over the...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Semiconductor Materials Features
 
Leveraging Automotive-Quality 150mm Si-CMOS processes makes SiC MOSFETs more affordable and reliable - issue 2/2018 April, 03 2018
Silicon IGBTs are suitable for voltage ranges in which a 1200 V-rated part is necessary, but they are limited tp ~25 kHz in hard switched applications....
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CoolSiC Trench MOSFET combining SiC performance with Silicon ruggedness - issue 3/2017 June, 30 2017
This article summarises selected features of the new ColSiC MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements...
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IEGT Plus SiC - A Hybrid Approach to Inverter Efficiency and Performance Improvement - issue 6/2013 October, 02 2013
Silicon Carbide devices have the potential to unlock signicant performance and efficiency improvements in applications ranging from rail traction to renewable energy generation...
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High Voltage Gallium Nitride Devices for Inverters - issue 5/2013 August, 26 2013
Gallium Nitride (GaN) devices now demonstrate higher efficiency in inverter circuits for both solar and motor drive systems and in power supply building blocks such as the DC/DC LLD and the PFC....
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The next stage in the commercialism of GaN-based power devices May, 18 2010
With the first commercially viable GaN based power device released into production, a new stage of implementation of this transformational technology is taking place.......
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Application considerations for the Silicon Carbide MOSFETs May, 18 2010
The SiC MOSFET has definitive advantages over Silicon switching devices. Howver, it's unique operating characteristics need to be carefully considered to fully realise these advantages. The gate driver needs to be capable of providing 20V drive with minimum output and high curent capapbility....
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GaN Based Power Devices: Cost-Effective Revolutionary Performance December, 02 2008
A novel gallium nitride (GaN) based power device platform promises to deliver figure-of-merit (FOM) performance that is at least an order of magnitude better than existing silicon MOSFETs.
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Characterization of Power Devices at Wafer Level June, 18 2007
Power Semiconductor test - Characterization of Power Devices at Wafer Level. PEE Issue 6 2007
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Prospects of IGCT Technology June, 01 2007
High Power Semiconductors - Prospects of IGCT Technology. Issue 6 2007
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Soft-Start Control of Electric Motors January, 16 2007
Motor Control-Soft-Start Control of Electric Motors. Issue 1 2007
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