Power Semiconductors Features

Features

Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In...
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Renewable Energies Push Power Electronics
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
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Power Semiconductors Features

Integrated Gate Driver Circuit Solutions - issue 5/2010	September, 01 2010
Power electronics systems are commonly used in motor drive, power supply and power conversion applications. They cover a wide output spectrum: from several hundred watts in small drives up to megawatts in wind-power installations or large drive systems. Inside the system the gate driver circuit with it's entensive control and monitoring functions form the interface between the microcontroller and the power switches (IGBT)....
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600/1200V IGBTs set benchmark performance in high switching speed applications	May, 18 2010
The third generation of high speed IGBTs from Infineon Technologies (H3) in the voltage class 600V and 1200V are optimsed for high speed switching in welding, UPS, SMPS and solar applications.....
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Can Gallium Nitride Replace Silicon	April, 28 2010
For the past decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market
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New 1200V SPT+IGBT and Diode for Temperature Applications	December, 14 2009
The application spectrum for the 1200V voltage class chips and modules is increasing worldwide due to the constant increase of power electronic systems present in various fields like automotive, industrial, regenerative power sources etc. ISSUE 8/2009
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Novel 3.5kV Low Loss Rectifier Diode	October, 19 2009
IXYS introduces a 600A 3 to 3.5kV diode with a low forward voltage drop, low leakage current and with an extremely high surge current rating. The experimental findings are consistent with numerical modelling results and show that by using Aluminium isolation diffusion, it is possible to get an ideal plane parallel breakdown voltage of 3500V.
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SiC Device Technologies Predicted Advantages	September, 16 2009
SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high volume and standard application segment such as the 400 to 480VAC line rated motor drives is considered to be ideal.
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Key Researches on SiC Drive Technologies	September, 08 2009
SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high-volume and standard application segment such as the 400 to 480VAC line rated motor is considered be ideal.
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Next Generation of Power MOSFETs	May, 12 2009
NexFET technology is a new generation of MOSFETs for power applications with its roots in a laterally diffused MOS (LDMOS) device used successfully for RF signal amplifications. The RF heritage provides minimum internal capacitances, and the vertical current flow offers a high-current density without gate de-biasing issues. By using NexFET switches, a converter’s efficiency can be significantly improved.
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