Features
Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In...
More details...
Renewable Energies Push Power Electronics
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
More details...
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
More details...
Feature Spotlight
Advantages of Advanced Active Clamping
December 14, 2009
Power Semiconductor manufacturers are offering IGBT modules with ever greater power densities. The limit is represented by the maximum power loss that can be dissipated; optimisation criteria are the packaging technology as well as the conduction and switching losses of the semicoductor chips. ISSUE 8/2009
| Home / News / Features / Events / Media Data / Issue Archive / Magazine Subscription / Contact Us
| Privacy Policy | Site Map | © Copyright DFA Media
| Immersive Media Web Design Surrey
| Privacy Policy | Site Map | © Copyright DFA Media
| Immersive Media Web Design Surrey