Features

Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In...
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Renewable Energies Push Power Electronics
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
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The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
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Power Electronics Europe Issue Archive
Issue 5 2008 - POWER DIODES
July 24, 2008
Power density is today’s magic word in the world of high tech yet affordable electric drives, especially when it comes to the two workhorses in power electronics - the IGBT and its accompanying free-wheeling diode. Together, these two components constitute the core of high tech power electronic solutions. The new 1200V
CAL diode provides 30% more power, yet is still thesame size as the previous chip generation, leaving more space in the power module. What’s more, the new fourth generation of CAL free-wheeling diodes is suitable for high application temperatures up to 175°C. These benefits mean that IGBT modules now take up less space and can be used with higher temperatures, making them suited for use in harsh ambient environments such as the engine compartment of
hybrid electric vehicles.
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