March 30, 2009

A new generation of silicon carbide Schottky diodes in 600 and 1200V blocking voltage class has recently been introduced by Infineon Technologies. A reduction of device capacitances and improved thermal coupling chip to package extend diode performance limits as well as cost-effectiveness. This article outlines how the recent innovations in SiC diodes now pave the way for benchmark efficiency in a number of power conversion solutions such as power factor correction in switched mode power supplies used in computing, telecommunication, LCD-TV and lighting, as well as solar inverters and motor drives.