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Next Generation High Peformance BIGT HiPaK Modules - issue 5/2010
The practical realization of the Bimode Insulated Gate Transistor (BIGT) will provide a potential solution for furutre high voltage applications demanding compact systems with hgher power levels. In...
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Renewable Energies Push Power Electronics
The total market for high-power semiconductors and modules will grow heavily over the next 5 years - pushed by green apps
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Power Electronics Europe Issue Archive
 
August 18, 2010
Next Generation high Performance BIGT HiPak Modules- July/August 2010 ... Read more
 
May 18, 2010
Power Semiconductors - 600/1200V IGBTs Set Benchmark Performance in High Switching Speed Applications ... Read more
 
April 28, 2010
Power Supply design - Designing Mulltiple Load System Power Supplies ... Read more
 
March 1, 2010
Steadily but surely automotive manufacturers are loking to design out the engine driven auxilliary loads such as fuel, water, brake and power steering pumps with electric driven ones... ... Read more
 
December 10, 2009
Power Semiconductor modules are offering IGBT modules with ever greater power densities. The limit is represented by the maximum power loss that can be dissipated ... Read more
 
October 16, 2009
In 2005, Siemens Drive Technologies introduced the first large inverter using shunts for phase current measuring and brought it into series production. It wasn’t until recently that the power output was extended to 132kW with the new SINAMICS G120 ... Read more
 
September 4, 2009
SiC has proven to be a good candidate as a material for next generation power semiconductors. To analyse the advantages of SiC based power devices over their silicon counterparts, a high volume and standard application segment such as the 400 to ... Read more
 
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