Features
Power_electronics Features

Edge Computing Leverages Modular Power in Scalable Micro Data Centres - May 2022
Edge computing is essential to realizing the full potential of artificial intelligence (AI), machine learning and internet of things (IoT). These technologies are being infused into every corner of...
More details...
Power Electronics Europe News
 
650V GaN Power IC

Tagore introduces 650V GaN Power IC, TP44200NM, comprising GaN Power FET with monolithically integrated driver

Delivering semiconductor solutions for over 10 years, Chicago-based Tagore Technology announces the the TP44200NM 650V Gallium Nitride Power FET with integrated driver IC in a compact 22 pin, 5 mm x 7 mm QFN package. The new device offers low on-resistance of180 mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server and telecom AC/DC power supplies, power factor correction (PFC) converter.

The TP44200NM Power IC has 650V E-mode GaN Power FET, driver, UVLO and high dv/dt immunity with and without supply - all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high frequency applications and slew rate control through external resistor.

Tagore Technology was founded in 2011 to design Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and powerr management applications. It is a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India.

www.tagoretech.com

 



 
Go Back   
Newsletter sign up

Sponsors