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Edge Computing Leverages Modular Power in Scalable Micro Data Centres - May 2022
Edge computing is essential to realizing the full potential of artificial intelligence (AI), machine learning and internet of things (IoT). These technologies are being infused into every corner of...
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Power Electronics Europe News
 
Soft shutdown 110 kW IGBT driver ships
Drivers include an integrated trigger mechanism which limits IGBT collector-emitter, or MOSFET source-drain voltages in the event of a short circuit. Soft shudown is implemented on-chip without additional external circuitry by controlling the on-chip high-side N-Channel booster stage. Increasing the output impedance of the gate driver enables the IGBT or MOSFET to turn off with a reduced di/dt, thereby limiting the collector-emitter or source-drain over-voltage. The first product to ship is the 2SC0106T2A0-12, a two-channel IGBT/MOSFET gate driver core for 1200V IGBTs in the 37 to 110kW range.

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