Power_electronics Features

SiC MOSFETs for Bridge topologies in three-phase power conversion - issue 6/2019
Efficiency, productivity and legislation are the main drivers in power applications today. Making more out of less energy and saving costs is putting a greater focus on better conversion efficiency...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Electronics Europe News
Soft shutdown 110 kW IGBT driver ships
Drivers include an integrated trigger mechanism which limits IGBT collector-emitter, or MOSFET source-drain voltages in the event of a short circuit. Soft shudown is implemented on-chip without additional external circuitry by controlling the on-chip high-side N-Channel booster stage. Increasing the output impedance of the gate driver enables the IGBT or MOSFET to turn off with a reduced di/dt, thereby limiting the collector-emitter or source-drain over-voltage. The first product to ship is the 2SC0106T2A0-12, a two-channel IGBT/MOSFET gate driver core for 1200V IGBTs in the 37 to 110kW range.

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