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Richardson RFPD expands GaN portfolio
The GS-065-060-3-B and GS-065-060-3-T GaN transistors make up the second-generation of GaN transistors produced by GaN Systems. 

The 650V E-mode GaN transistors provide low RDS(on) of 25mΩ and have an IDS raring of 60A. The manufacturer’s Island Technology cell layout is used to optimise high current die performance and yield.

The transistors are offered in GaNpx packaging, with dual gate pads to optimal board layout, enabling low inductance and low thermal resistance in a small form factor, says the company.

The GS-065-060-3-B is cooled from the bottom and the GS-065-060-3-T is cooled from the top. Both offer low junction-to-case thermal resistance for demanding high-power applications, including solar inverters, energy storage systems, on-board chargers, uninterruptable power supplies, industrial motor drives and wireless power transfer.

The gate drive requirements are 0 to 6.0V with transient tolerant gate drive of -20 / 10V and high switching frequency is above 10MHz. The GaN transistors also feature reverse conduction capability and zero reverse recovery loss.

The second generation of GaN transistors in GaNpx packaging are available immediately. Richardson RFPD also offers full design support capabilities.


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