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Edge Computing Leverages Modular Power in Scalable Micro Data Centres - May 2022
Edge computing is essential to realizing the full potential of artificial intelligence (AI), machine learning and internet of things (IoT). These technologies are being infused into every corner of...
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Power Electronics Europe News
Integrated modules pair a gate driver with an RF MOSFET
They can also be used for applications requiring high-speed, high-power switching, says the company. The IXZ631 series CMOS high-speed, high-current integrated gate driver and MOSFET modules integrate the IXRFD630 high speed gate driver paired with an RF power MOSFET, and packaged in the company’s DE-Series low-inductance, surface mount RF package. The package’s layout techniques are claimed to minimise stray lead inductance for optimum switching performance. Designed with small internal delays, the modules can be used for high power operation where combiners are used. Two devices are available, the 1,000V, 12A IXZ631DF12N100 and the 500V, 18A IXZ631DF18N50. Both produce voltage rise and fall times of less than 5ns, and minimum pulse widths of 8ns. In pulsed mode the 500V module provides up to 95A of peak current; the 1,000V module provides 72A. The isolated substrate allows a high isolation voltage, in excess of 2,500V. The level of integration into a single package reduces footprint and heatsink area.

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