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Edge Computing Leverages Modular Power in Scalable Micro Data Centres - May 2022
Edge computing is essential to realizing the full potential of artificial intelligence (AI), machine learning and internet of things (IoT). These technologies are being infused into every corner of...
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Power Electronics Europe News
 
High-Current GaN FETs

At PCIM Europe, GaN Systems (hall 9-511) exhibits GaN transistors such as the 100 V, 120 A, 5 mΩ GaN E-HEMT device, the highest current and power efficient 100 V GaN power transistor and 120 A, 650 V, 12 mΩ GaN E-HEMT. A new virtual Circuit Simulation Tool that allows design engineers to evaluate GaN Systems’ devices in a variety of topologies and compare application conditions before hardware or system construction. Featuring a simple and intuitive interface, an engineer can quickly and easily tune parameters to suit their design goals and see the results in real time. New reference designs to ease any design challenge, including a 190W LLC PFC adapter reference design, optocoupler reference design from Broadcom, and low DCR, high frequency controllers from Analog Devices. A 3 kW evaluation kit for high-efficiency power systems for data center, automotive, and energy storage system applications. This evaluation kit enables power engineers to quickly take full advantage of GaN power transistors in designing improved and novel power systems.

www.GaNSystems.com

 



 
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