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GaN FETs enable large area wireless power transfer -issue 6/2017
To ensure widespread adoption, wireless power systems need to move beyond small charging particles and become active power sources over large surface areas. for magnetic resonant systems, this...
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Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
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Power Electronics Europe News
 
Low latency N-channel MOSFET driver suits high frequency switching

It provides 100% duty cycle capability, and the internal charge pump enhances an external N-channel MOSFET switch, enabling it to remain on indefinitely, says the company.

 

The 1.0Ω gate driver can drive large gate capacitance MOSFETs with very short transition times and 35s propagation delays. This low latency means that the driver is suitable for both high frequency switching and static switch applications.

 

The N-channel MOSFET driver is designed to receive a ground-referenced, low voltage digital input signal and quickly drive a high side N-channel power MOSFET whose drain can be between 0 and 60V (65V absolute maximum). It operates from a 3.5 to 15V driver bias supply range with an adjustable under-voltage lockout. The fast rise and fall times of 13ns, when driving a 1,000pF load, minimise switching losses. Other protection features are an adjustable turn-on slew rate and an adjustable over-voltage lockout.

 

The MSOP-10 package has pins configured for high voltage spacing. It is available in three operating junction temperature ranges of extended and industrial versions from -40 to 125°C, a high temperature automotive version from -40 to 150°C and a military grade from -55 to 150°C.

 

 

 



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