Power_electronics Features

GaN FETs enable large area wireless power transfer -issue 6/2017
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Power Electronics Europe News
Low latency N-channel MOSFET driver suits high frequency switching

It provides 100% duty cycle capability, and the internal charge pump enhances an external N-channel MOSFET switch, enabling it to remain on indefinitely, says the company.


The 1.0Ω gate driver can drive large gate capacitance MOSFETs with very short transition times and 35s propagation delays. This low latency means that the driver is suitable for both high frequency switching and static switch applications.


The N-channel MOSFET driver is designed to receive a ground-referenced, low voltage digital input signal and quickly drive a high side N-channel power MOSFET whose drain can be between 0 and 60V (65V absolute maximum). It operates from a 3.5 to 15V driver bias supply range with an adjustable under-voltage lockout. The fast rise and fall times of 13ns, when driving a 1,000pF load, minimise switching losses. Other protection features are an adjustable turn-on slew rate and an adjustable over-voltage lockout.


The MSOP-10 package has pins configured for high voltage spacing. It is available in three operating junction temperature ranges of extended and industrial versions from -40 to 125°C, a high temperature automotive version from -40 to 150°C and a military grade from -55 to 150°C.




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