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Power Electronics Europe News
 
Isolated SiC gate driver reduces carbon footprint

Designers of high voltage/high power systems can improve power supply efficiency by up to four percentage points over competitive solutions, reducing power loss and the resulting carbon footprint by 30%, says the company. The driver IC is for use in switch-mode power supplies in industrial communication systems for solar power inverters, motor drives, electric cars, energy storage systems, uninterrupted power supplies, data farms and high power/high efficiency power supplies.

Many switch-mode power supply applications are adopting wide-bandgap silicon carbide (SiC) transistors to improve power efficiency and transistor reliability, reports the company. However, the high switching frequency incurs transients that generate noise, which either disrupts operations or requires extensive mitigation. The MAX22701E is claimed to offer the industry's highest common-mode transient immunity (CMTI) of 300kV/µs typical to deliver industry-leading reliability. CMTI is up to three times higher than the nearest competitor, says the company, for increased system uptime. The device is also claimed to have best-in-class driver propagation specifications of 35ns typical, or two times lower propagation delay than the closest competitor, and propagation delay matching between the high-side and low-side gate drivers of 5ns maximum which is five times lower than the closest competitor; all contributing to reduced dead time. As a result, power efficiency is up to four percentage points which, at the 90% efficiency range, translates to approximately 30 to 40% reduction in wasted power, reports the company.

The SiC gate driver is available in an 8-pin narrow body SOIC package, measuring 3.90 x 4.90mm and has an extended temperature range of -40 to 125°C.

The company also offers the MAX22701EVKIT# evaluation kit.

 



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