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Power Electronics Europe News
 
80V TrenchFET MOSFET increases efficiency

The Gen IV n-channel power MOSFET is supplied in the 6.15 x 5.15mm PowerPAK SO-8 single package. It saves energy by increasing the efficiency of power conversion topologies and switching circuitry, with an on-resistance times gate charge of 129mΩ nC.

The Vishay Siliconix MOSFET combines on-resistance down to 2.35mΩ typical at 10V with low gate charge of 55nC and COSS of 614pF, to reduce the power losses from switching, channel conduction, and diode conduction, explains the company. On-resistance times gate charge figure of merit (FOM) is 12.2% lower than the closest competing product and 22.5% lower than the previous-generation device, says the company. It is intended for typical 48V input to 12V output DC/DC converters.

In DC/DC and AC/DC conversion applications it can be used as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters and the OR-ing function in systems such as telecomms and data centre server power supplies, solar micro-inverters, motor drive control in power tools and industrial equipment and battery switching in battery management modules.

The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.

Samples and production quantities are available now, with lead times of 12 weeks.



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