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Power Electronics Europe News
SiC FETs accelerate switching speeds

The UF3C FAST series of 650 and 1200V SiC FETs are in a standard TO-247-3L package and designed as a drop-in replacement for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts.


System upgrades do not require changes to the existing gate drive circuitry, says the company. Turn-on losses can be reduced, based on a 50% reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.


Target applications include hard switched circuits, such as active rectifiers and totem-pole PFC stages, commonly used in electric vehicle (EV) charging, telecomms rectifiers and server supplies.


The FETs are built on the company’s Gen-3 SiC transistor technology, and integrate a faster SiC JFET with a custom-designed Si-MOSFET to combine normally-off operation, a high-performance body diode and easy gate drive of the MOSFET.


Compared with other wide band-gap technologies, the SiC cascode devices support standard 12V gate drive, and have assured avalanche ratings (100% production-tested).


The range comprises the UF3C120040K3S (1200V /35mΩ), UF3C065030K3S (650V / 30mΩ) and UF3C065040K3S (650V / 42mΩ).



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