Power_electronics Features

Integrated GaN Power Stage for eMobility - issue 2/2020
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Power Electronics Europe News
Five-phase development board shows GaN transistor boost for power conversion
Efficient Power Conversion’s EPC9130 five-phase development board demonstrates the size reduction and enhances efficiency for power conversion using high frequency switching eGaN power transistors, says the company.

The board has 12A per phase and a maximum output current of 60A, making the board capable of over 700W. High-power density exceeds 1250W per cubic inch, and over 96 per cent efficiency. The board has five phases, each using two 100V EPC2045 eGaN FETs in a half-bridge configuration with a uPI Semiconductor, the up1966A, gate driver. The PWM signals to the gate drivers are fed by an onboard dsPIC33 microcontroller from Microchip.

According to the company, the board contains all critical components and layout for optimal switching performance, with a bill of materials of less than $0.06/W in volume.

It can be used for emerging computing applications in smaller form factors, for the server market, as well as multi-user gaming systems, autonomous cars, artificial intelligence, and cryptocurrency mining. The board improves the power density while reducing the size and cost of the 48 to 12V DC/DC converters needed for these applications, adds the company.

There is a Quick Start guide is available online, containing set up procedures, circuit diagram, performance curve, and bill of materials. The development boards are available for immediate delivery from distributor, Digi-Key.



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