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Power Electronics Europe News
 
1200V SiC MOSFETs are designed for fast switching in power conversion

The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer low on-resistance (RDS(ON)) levels of 120 and 160mΩ respectively. The SiC MOSFETs are designed for use as power semiconductor switches in power conversion systems, and are claimed to outperform silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances.

They combine high operating voltages and fast switching that, according to the company, traditional power transistors, such as silicon IGBTs with similar current ratings and packages, cannot match.

Typical applications include electric vehicles, industrial machinery, renewable energy (e.g. solar inverters), medical equipment, switch-mode power supplies, uninterruptible power supplies, motor drives, high-voltage DC/DC converters and induction heating.

The reduction in passive filter components at the system level supports increased power density, to optimise a design for high-frequency, high-efficiency applications.

The low gate charge and output capacitance combined with low on-resistance allows for minimal power dissipation, higher efficiency and a reduction in the size and sophistication of the cooling techniques required, says the company.

The SiC MOSFETs are available in TO-247-3L packages. Sample requests may be placed through authorised Littelfuse distributors.

The SiC MOSFETs are the products of the Littelfuse-Monolith partnership, formed in 2015, to develop power semiconductors for industrial and automotive markets.  

For a listing of Littelfuse distributors, please visit Littelfuse.com. 



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