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Power Electronics Europe News
 
SiC Schottky diodes operate up to 175°C

The AEC-Q101-qualified LSIC2SD065CxxA and LSIC2SD065AxxA series diodes are available with a choice of five current ratings (6.0, 8.0, 10, 16 or 20A). Characteristics include negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175°C, for use in applications that require enhanced efficiency, reliability, and thermal management.

 

The company claims that, compared to standard silicon PN-junction diodes, the 650V SiC Schottky diodes support dramatic reductions in switching losses and substantial increases in the efficiency and robustness of a power electronics system. Additionally, they dissipate less energy and can operate at higher junction temperatures than Si-based diodes to allow for smaller heatsinks and a smaller system footprint.

 

Typical applications include power factor correction (PFC), buck/boost stages in DC/DC converters, free-wheeling diodes in inverter stages, high-frequency output rectification and electric vehicle (EV) applications.

 

They also have lower switching losses than silicon bipolar diodes and fast, temperature-independent switching behaviour for high-frequency power switching.

The positive temperature co-efficient enables safe operation and ease of paralleling, says the company, while the 175°C maximum operating junction temperature provides a larger design margin and relaxed thermal management requirements.

 

The diodes join the company’s existing 1200V SiC Schottky diodes and the AEC-Q101 qualification means they can be used in demanding applications.

 

The LSIC2SD065CxxA series SiC Schottky diodes are available in TO-252-2L (DPAK) packages, in tape and reel format and the LSIC2SD065AxxA series SiC Schottky diodes are available in TO-220-2L packages.

 

 

 

 



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