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GaN FETs accelerate GaN adoption

The company believes it offers the first GaN (Gallium Nitride) Power ICs, based on its proprietary AllGaN technology. The iDrive GaN Power ICs, the NV6131, NV6105 and NV6115 offer a high-efficiency 650V, 160mΩ power FET with increasing integration of digital and analogue circuits for speed, energy efficiency, power density and reduced system cost, claims the company.

Although GaN can enable up to 100x higher frequencies than silicon, controlling and protecting the devices has limited adoption. According to the company, integrating digital and analogue circuits monolithically with the GaN power device solves these system level problems. The GaN Power ICs with iDrive are claimed to guarantee optimised and robust performance for any application. A 10 to 100x increase in system operating frequency is combined with higher efficiencies to enable up to a 5x increase in power densities and 20% lower system costs.

By integrating all gate-drive-related circuitry to eliminate frequency-related power losses leads to significant frequency and efficiency gains, says the company. Potential application areas are mobile fast chargers, thin TVs, data centres, LED lighting, solar and electric vehicle markets.

The NV6131, NV6105 and NV6115 are immediately available in a 5.0 x 6.0mm QFN package, and will be demonstrated at APEC (Applied Power Electronics Conference) 26 to 30 March, in Tampa, Florida, USA. 

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