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A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Power Electronics Europe News
 
Additions to MOSFET family boast industry-leading on-resistance

Nine 40V and five 45V models have been added to the U-MOS IX-H series of low-voltage N-channel power MOSFETs. The company claims that they deliver industry leading-class low on-resistance and high-speed performance.

 

The MOSFETs are designed for industrial and consumer applications, including high-efficiency DC/DC converters, high-efficiency AC/DC converters, power supplies and motor drives.

 

They use the company’s low-voltage trench structure U-MOS IX-H process. Depending on the device, maximum RDS(ON) (@VGS=10V) ranges from 0.80mΩ to 7.5mΩ.

 

The structure is also claimed to improve switching applications to a level that surpasses current products from the company. A reduction in output charge improves output loss, contributing to system efficiency. The cell structures are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering system EMI, adds the company.

 

All of the new devices support 4.5V logic-level drives and are available in SOP-Advance (5.0 x 6.0mm) and TSON-Advance (3.0 x 3.0mm) packages.

  

Toshiba will be at Embedded World (14-17 March) Hall 3A - 129

 



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