Designed to shorten development times while exceeding power density norms and reducing power loss the 

As the industry moves to accelerate the transition to decarbonisation, there is a shift in demand towards installing energy infrastructure systems featuring DC fast chargers (DCFC), solar inverters and battery energy storage systems (BESS).

Adopting SiC-based power stages is critical in reducing power losses, increasing power density and reducing cooling costs, advises the distributor.  

Typical applications for onsemi EliteSiC devices include UPS, DC/DC converters, boost inverters, solar inverters, electric vehicle charging stations and industrial power systems. These devices are Pb−free, halide free and RoHS-compliant.

Farnell now stocks the EliteSiC Power, single N-channel with typical low gate charge of 56nC and low effective output capacitance (typically 79pF) and a junction temperature of 175°C.

There is also the EliteSiC MOSFET NXH006P120MNF2  which consists of a 6m /1200V SiC MOSFET half bridge and a thermistor in an F2 package. It is available with or without pre−applied thermal interface material (TIM) and solderable or press−fit pins.

Adrian Cotterill, global product segment leader, transistors and WBG at Farnell, said: “This is a key addition to Farnell’s portfolio that will ensure energy infrastructure systems are developed using the highest calibre, best-of-breed components . . . highly optimised SiC products [which] meet the latest performance requirements of energy infrastructure end applications.”