Features
Power_electronics Features

BEV advancements are driving sales, but vehicle safety and reliability will ensure long-term viability
Innovative power architectures using power modules provide power redundancy and improve overall safety and system performance By Patrick Kowalyk, Automotive FAE,Vicor
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
 
Four high voltage MOSFETs are efficient for LED lighting
Available with 800 and 900V ratings, the n-channel devices have typical on resistance (RDS(ON)) ratings down to just 1.9Ω. Target applications are flyback converters in LED lighting, supplementary power supplies and other circuits requiring current switching below 5A.

They are based on Toshiba’s π-MOS VIII (Pi-MOS-8) eighth generation planar semiconductor process, which combines high cell integration with optimised cell design, says the company. This technology supports reduced gate charge and capacitance without losing the benefits of low RDS(ON).  

The 2.5A TK3A90E and 4.5A TK5A90E feature VDSS ratings of 900V and have respective typical RDS(ON) ratings of 3.7 and 2.5Ω. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer VDSS ratings of 800V with respective typical RDS(ON) ratings of 2.8 and 1.9Ω.

 

Low maximum leakage current is only 10μA (VDS = 60V) and gate threshold voltage range is 2.5 to 4.0V (when VDS is 10V and drain current is 0.4mA). All four are supplied in a standard TO-220SIS form factor.

Visit Toshiba Electronics Europe at PCIM 2016: , Hall 9 Booth 301

 

 




View PDF
 
Go Back   
Newsletter sign up

Sponsors