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Power Electronics Europe News
 
900V MOSFETs adds safety margins in high power designs

The company also claims that the super-junction MOSFETs deliver best-in-class on-resistance (RDS(ON)) and dynamic characteristics.

 

A 900V breakdown voltage assures extra safety margin in systems with high bus voltages, says the company. The 900V MOSFETs have RDS(ON) below 100mΩ, claimed to be the industry’s best RDS(ON) among DPAK devices. It also claims the ndustry’s lowest gate charge (Qg) to ensure faster switching for greater flexibility where a wide input-voltage range is required. These characteristics are designed for high efficiency and reliability in all types of flyback converters including standard, quasi-resonant, and active-clamp designs covering power ratings from 35 to 230W or higher. Low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

 

The MOSFETs can be used to improve the performance of a server power supplies, three-phase switched-mode power supplies (SMPS), LED lighting supplies, electric-vehicle (EV) chargers, solar generators, welders, industrial drives, and factory automation.

 

The MDmesh K5 super-junction transistors have voltage ratings of 800, 850, 900, 950, 1050, 1200, and 1500. Package choices are TO-220AB, TO-220FP, TO-247, TO-247 Long Lead, IPAK and I2PAK, D2PAK and DPAK surface-mount power package options.

 

 

 

 

 

 



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