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New Developments in RET Technology - Feb/March 2021
Resistor-Equipped Transistors (RETs) also known as digital transistors or pre-bias transistors offer many benefits, including saving space, reducing manufacturing costs and increased...
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Power Electronics Europe Issue Archive
 
Issue 3 APRIL 2009 - 3rd Generation Silicon Carbide
March 30, 2009
A new generation of silicon carbide Schottky diodes in 600 and 1200V blocking voltage class has recently been introduced by Infineon Technologies. A reduction of device capacitances and improved thermal coupling chip to package extend diode performance limits as well as cost-effectiveness. This article outlines how the recent innovations in SiC diodes now pave the way for benchmark efficiency in a number of power conversion solutions such as power factor correction in switched mode power supplies used in computing, telecommunication, LCD-TV and lighting, as well as solar inverters and motor drives.
 
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