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Benefits of CoolSiC MOSFETs in Bi-Directional Inverter Applications - July 2021
With the move to renewable energy, there is an increased focus not only on generation but also storage, to make the most of the intermittent supply from wind and solar. Batteries are the common...
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Power Electronics Europe Issue Archive
 
Issue 3 APRIL 2009 - 3rd Generation Silicon Carbide
March 30, 2009
A new generation of silicon carbide Schottky diodes in 600 and 1200V blocking voltage class has recently been introduced by Infineon Technologies. A reduction of device capacitances and improved thermal coupling chip to package extend diode performance limits as well as cost-effectiveness. This article outlines how the recent innovations in SiC diodes now pave the way for benchmark efficiency in a number of power conversion solutions such as power factor correction in switched mode power supplies used in computing, telecommunication, LCD-TV and lighting, as well as solar inverters and motor drives.
 
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