Power_electronics Features

Evaluating Three Key Pieces of a SiC Total System Solution - October 2020
Following a rapid expansion of SiC product options, the industry’s next challenge is simplifying the design-in process for end users. Power system developers need holistic solutions that address not...
More details...
Linear voltage regulators operate at automotive temperatures
Designed for high reliability, high temperature applications, the CMT-Antares is Cissoid's latest regulator.
More details...
Power Electronics Europe Issue Archive
December 9, 2008
Future high power IGBT modules with Reverse Conducting (RC) IGBT technology incorporating an integrated freewheeling diode in the same silicon volume will be capable of providing exceptional electrical performance in terms of the maximum allowable output current capability. The RC-IGBT concept is not new and is basically derived from the concept of the MOSFET’s integrated body diode. With the advancements of modern IGBT and diode structures, more development effort is being aimed at reviving the RC-IGBT concept, since the potentials that could arise from such a technological step are great. In this article, a fully functional high voltage and high current IGBT module rated at 3300V consisting solely of RC-IGBT chips under hard switching conditions and under heavy paralleling in high current modules is demonstrated.
Go Back   
Newsletter sign up