Navitas Semiconductor, an industry leader in next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced it has been awarded the ‘Outstanding Technical Collaboration Award’ from VREMT Energy, a subsidiary of Geely, which specialises in new energy vehicle power batteries, electric drive systems, charging systems and energy storage systems.

VREMT and Navitas say they opened a joint R&D Laboratory to accelerate EV power-system developments using Navitas’ GaNFast power ICs and GeneSiC power MOSFETs, driving technical breakthroughs and facilitating the rapid deployment of high-voltage EV systems. GaN and SiC technologies enable improved efficiency, weight, and size, critical for EV on-board chargers (OBCs) and DC-DC converters to deliver faster charging, longer range, and greater system efficiency for electric vehicles.

Navitas says it recently introduced the industry’s first automotive ‘AEC-Plus’ qualified SiC MOSFETs in HV-T2PaK top-side cooled package, which offers a new level of reliability to meet the system lifetime requirements of the most demanding automotive and industrial applications. The latest generation of 650 V and 1200 V ‘trench-assisted planar’ SiC MOSFETs combined with an optimised, HV-T2PaK top-side cooled package, delivers the industry’s highest creepage of 6.45 mm to meet IEC-compliance for applications up to 1200V.

In April 2025, automotive grade GaNSafe ICs were introduced achieving AEC-Q100 and AEC-Q101 qualifications, showcasing GaN’s next inflection into the automotive market. The GaNSafe 4^th generation family integrates control, drive, sensing, and critical protection features, enabling unprecedented reliability and robustness in high-power applications. It is said to be the world’s safest GaN with short-circuit protection (350ns max latency), 2kV ESD protection on all pins, elimination of negative gate drive, and programmable slew rate control. All these features are controlled with 4 pins, allowing the package to be treated like a discrete GaN FET, requiring no V_CC pin.

 “This award is a testament to Navitas’ technology leadership and commitment to the EV industry,” said Charles Zha, Navitas SVP and GM of APAC.

 “We are proud that partnering with VREMT — the leading global EV power solutions provider, our GaN and SiC solutions can empower ZEEKR, Volvo, and SMART and potentially more next-generation EV makers worldwide. Our unwavering commitment to ‘Electrify Our World’ will continue to drive innovation and collaboration as we lead the clean energy revolution in transportation and beyond.”