AOS says its latest MOSFET is designed as an ideal solution for 48V Hot Swap architectures in AI servers. The power demands of AI servers are intensifying, primarily driven by the increasing performance in the GPU/TPU. In addition to its wide SOA capability, the AOLV66935 Hot Swap MOSFET features very low on-resistance to meet these performance, efficiency and reliability challenges.

The AOLV66935 utilises AOS’ 100V AlphaSGT proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. AOS has tested and characterised the SOA at 25°C as well at higher operating conditions of 125°C giving system architects the confidence that the device will operate reliably under harsh conditions. Available in AOS’ state-of-the-art packaging, the MOSFET’s LFPAK 8x8 gull-wing constructed package is 60% smaller compared to the TO-263 (D2PAK) package. It also features advanced clip technology with a high current rating to provide high inrush current capabilities. In addition, the copper clip and packaging technology used offers low thermal resistance for improved thermal management. The AOLV66935 is manufactured in IATF 16949-certified facilities, and its LFPAK 8x8 packaging is compatible with automated optical inspection (AOI) manufacturing requirements.

 The company says furthermore, the AOLV66935 provides low power loss and reduced heat generation due to its leading low RDS(on) of 1.86 milliohms maximum rating at Vgs=10V. All the advanced features and high current capabilities designed into the AOLV66935 MOSFET deliver the necessary robustness for enhanced thermal cycling in harsh conditions that is now required in the latest AI server applications.

 “To be able to perform the 48V hot swap in AI servers requires a MOSFET that excels in high current capability while providing exceptional high SOA robustness and reliability. AOS designed the AOLV66935 High SOA MOSFET packaged in our advanced LFPAK 8x8 specifically to meet these demands. Plus, its exceptional low on-resistance significantly decreases conduction losses so fewer devices in parallel are required allowing designers to meet space limitations,” said Peter H. Wilson, Sr. Director of MOSFET product line at AOS.