The company says this seventh-generation platform delivers a new state-of-the art in transistor performance. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical R_DS(on) of 0.84 mΩ and a highly optimised R_DS(on) × Q_G figure of merit (FoM) < 12 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives.

It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems.

The device is thermally optimised for high power density thanks to its small 3.3 × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W.   

According to Alex Lidow, CEO and Co-founder of EPC, “We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance.  The 40 V, EPC2366 is the first of this family to enter mass production.  However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026.”

To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.