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650V GaN Power IC

Tagore introduces 650V GaN Power IC, TP44200NM, comprising GaN Power FET with monolithically integrated driver

Delivering semiconductor solutions for over 10 years, Chicago-based Tagore Technology announces the the TP44200NM 650V Gallium Nitride Power FET with integrated driver IC in a compact 22 pin, 5 mm x 7 mm QFN package. The new device offers low on-resistance of180 mOhm and fast switching to deliver a highly efficient, low-cost power solution in a small footprint for a variety of applications requiring high power density including USB-PD charger, server and telecom AC/DC power supplies, power factor correction (PFC) converter.

The TP44200NM Power IC has 650V E-mode GaN Power FET, driver, UVLO and high dv/dt immunity with and without supply - all monolithically integrated on GaN-on-Si substrate. The device has low propagation delay for high frequency applications and slew rate control through external resistor.

Tagore Technology was founded in 2011 to design Gallium Nitride-on-Silicon (GaN-on-Si) semiconductor technology for Radio Frequency (RF) and powerr management applications. It is a fabless semiconductor company with design centers in Arlington Heights, Illinois, USA and Kolkata, India.



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