Power_electronics Features

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Power Electronics Europe News
100V GaN transistor meets space power conversion requirements
The 100V GaN FET is suitable for high-reliability environments, including space. It has resistance of 3.9mΩ and current rating of 345A in a small 13.9mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1Mrad and SEE (single event effect) immunity for linear energy transfer (LET) of 85MeV/(mg/cm2).

The EPC7018 joins the company’s EPC7014, EPC7007, EPC7019 in its Rad-Hard family. All are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

GaN has higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and very low on-resistance, compared with silicon-based devices, claims EPC, enabling higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon, continued EPC.

This 100V GaN FET can be used for DC/DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites and avionics.

“The EPC7018 offers designers a high power, ultra-low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”, said Alex Lidow, CEO, and co-founder of EPC

The EPC7018 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.

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