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Integrated GaN Power Stage for eMobility - issue 2/2020
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Power Electronics Europe News
 
Radiation Hardened GaN By EPC Space

Efficient Power Conversion (EPC) Corporation and VPT, Inc., A HEICO company announce the establishment of EPC Space LLC, a joint venture focused on designing and manufacturing radiation hardened (Rad Hard) GaN-on-Silicon transistors and ICs packaged, tested, and qualified for satellite and high-reliability applications. EPC Space will provide high-reliability power conversion solutions for critical spaceborne environments in applications including power supplies, light detection and ranging (lidar), motor drive, and ion thrusters. These GaN-based components offer superior performance advantages over traditional Silicon-based solutions. “This joint venture is taking the superior performance of gallium nitride to the high reliability community offering electrical and radiation performance beyond the capabilities of the aging Rad Hard Silicon MOSFETs,” noted Alex Lidow, CEO and Co-founder of EPC. “EPC’s GaN technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before. We are excited about this venture’s ability to provide mission-critical components and services to our high-reliability markets,” commented Dan Sable, Founder and CEO of VPT, Inc.

EPC Space CEO Bel Lazar brings 30 years of experience in the semiconductor, aerospace, and defense technology fields. In addition to his role as CEO of EPC Space, he currently serves as COO of Efficient Power Conversion Corporation. Most recently, Bel served as an Acting CEO of Freebird Semiconductor Corp. Prior to joining EPC, Bel was President & Chief Executive Officer at API Technologies Corp.

EPC’s Space Rad Hard GaN discrete devices (40 V – 300 V / 4 A – 30 A) have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low on-resistance values. The lateral structure of the die provides for very low gate charge and extremely fast switching times. These features enable higher power densities, higher efficiencies and more compact and lighter packaging.

http://epc.space/



 
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