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Benefits of CoolSiC MOSFETs in Bi-Directional Inverter Applications - July 2021
With the move to renewable energy, there is an increased focus not only on generation but also storage, to make the most of the intermittent supply from wind and solar. Batteries are the common...
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Power Electronics Europe News
 
MOSFET meets fast switching load needs
The AP2325GEU6-HF-3 P-channel enhancement-mode power MOSFET by APEC (Advanced Power Electronics Corp), can be used in high-switching applications such as load switches.
It combines fast switching, low on-resistance and cost-effectiveness, and has a low gate charge. It features a minimum drain-source breakdown voltage (BVDSS) of -20V, maximum RDS(ON) of 145mΩ, and a maximum continuous drain current (ID) at 25˚C of -1.8A.
It is offered in a RoHS/REACH-compliant, halogen-free SOT-363, surface-mount package, used in commercial and industrial applications where a small board footprint is required.
 


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