Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
1200V field stop trench IGBTs reduces solar inverter losses and board size

The three IGBTs are also suitable for use in UPS (uninterruptible power supplies), and welders, says Fairchild Semiconductor.

They minimise conduction losses by having a VCE(SAT) of 1.8V; lower than that of the previous fast-switching NPT IGBTs, says the company. They are claimed to have one of the lowest VCE(SAT) ratings available in its category. Switching losses are low with an EOFF value of under 30µJ/A. All devices contain a co-packed diode optimised for fast switching.

According to the company, the IGBT allows designers to operate devices at higher switching frequencies than competitive solutions, helping to reduce the size and cost of the capacitors and inductive components in the circuit. This results in system designs with higher power density, smaller size and lower bill of material costs.

It is tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. It is available in the TO247 package with 20mm lead-length and offer a 15 (FGH15T120SMD), 25 (FGH25T120SMD), and 40A (FGH40T120SMD) current rating.

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