Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
600V IGBTs are smooth operators
A series of 600V trench-gate field-stop IGBT (insulated gate bipolar transistors) from STMicroelectronics have a smooth and tail-less turn-off characteristic, saturation voltage as low as 1.8V, and operate up to 175°C. They increase system energy efficiency, allow higher switching frequencies, and simplify thermal and EMI design, says the company.

The V series devices eliminate the conventional IGBT turn-off current tail and have ultra-thin die thickness to assist switching performance and improve thermal dissipation. The proprietary trench gate field-stop process provides improved thermal resistance and raises junction operating temperature, as well as allowing tight control over parameters such as saturation voltage, allowing safe paralleling of multiple IGBTs.

A co-packaged ultra-fast soft-recovery diode minimises turn-on energy losses. Diode-free variants are also available. The IGBTs are rated from 20 to 80A and are in production now in TO-3P, TO-3PF, TO-220, TO-220FP, TO-247 or D2PAK packages.

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