Power_electronics Features

A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
More details...
Semiconductor Materials Features
Power GaN can revolutionise the industrial world - issue 3/2019 June, 26 2019
Industry 4.0 brings rise to an era of smart factory floors that synergize mass production capabilities with automation, robotics and M2M communication....
View PDF

Leveraging Automotive-Quality 150mm Si-CMOS processes makes SiC MOSFETs more affordable and reliable - issue 2/2018 April, 03 2018
Silicon IGBTs are suitable for voltage ranges in which a 1200 V-rated part is necessary, but they are limited tp ~25 kHz in hard switched applications....
View PDF

CoolSiC Trench MOSFET combining SiC performance with Silicon ruggedness - issue 3/2017 June, 30 2017
This article summarises selected features of the new ColSiC MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements...
View PDF

IEGT Plus SiC - A Hybrid Approach to Inverter Efficiency and Performance Improvement - issue 6/2013 October, 02 2013
Silicon Carbide devices have the potential to unlock signicant performance and efficiency improvements in applications ranging from rail traction to renewable energy generation...
View PDF

High Voltage Gallium Nitride Devices for Inverters - issue 5/2013 August, 26 2013
Gallium Nitride (GaN) devices now demonstrate higher efficiency in inverter circuits for both solar and motor drive systems and in power supply building blocks such as the DC/DC LLD and the PFC....
View PDF

The next stage in the commercialism of GaN-based power devices May, 18 2010
With the first commercially viable GaN based power device released into production, a new stage of implementation of this transformational technology is taking place.......
View PDF

Application considerations for the Silicon Carbide MOSFETs May, 18 2010
The SiC MOSFET has definitive advantages over Silicon switching devices. Howver, it's unique operating characteristics need to be carefully considered to fully realise these advantages. The gate driver needs to be capable of providing 20V drive with minimum output and high curent capapbility....
View PDF

GaN Based Power Devices: Cost-Effective Revolutionary Performance December, 02 2008
A novel gallium nitride (GaN) based power device platform promises to deliver figure-of-merit (FOM) performance that is at least an order of magnitude better than existing silicon MOSFETs.
View PDF

Characterization of Power Devices at Wafer Level June, 18 2007
Power Semiconductor test - Characterization of Power Devices at Wafer Level. PEE Issue 6 2007
View PDF

Prospects of IGCT Technology June, 01 2007
High Power Semiconductors - Prospects of IGCT Technology. Issue 6 2007
View PDF

Soft-Start Control of Electric Motors January, 16 2007
Motor Control-Soft-Start Control of Electric Motors. Issue 1 2007
View PDF

Newsletter sign up