Power_electronics Features

A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Power Electronics Europe News
N-channel enhancement-mode power MOSFETs
APEC (Advanced Power Electronics Corp. USA) has launched cost-effective, N-channel enhancement-mode power MOSFETs offering a fast switching performance and very low on-resistance. The AP99T03GS-HF-3 MOSFET comes in a TO-263 package, used for commercial and industrial surface-mount applications. Devices are well-suited for low voltage applications such as DC/DC converters, and are also available as the AP99T03GP-HF-3 in a TO-220 through-hole package which is intended for applications where a small PCB footprint or an attached heatsink is required. Both MOSFETs benefit from simple drive requirements and offer a fast switching performance, very low on-resistance of 2.5 mΩ, a breakdown voltage of 30 V, and a continuous drain current of 120 A. The components are halogen-free and fully RoHS-compliant.

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