The AOTF190A60L is the first product in the new αMOS5 HV MOSFET platform. It is engineered for switching and EMI performance needs in high-efficiency applications, and is optimised for server power supplies, high-end computers, charging stations and other high-performance applications. 

αMOS5 reduces the on-resistance R_DS x A per unit area by 30% compared with the previous generation, reducing conduction losses. It also enables future HV product offerings to fulfill the market trend of higher power density in a new, smaller and more efficient package, adds the company.

The αMOS5 technology is claimed to significantly improve switching performance compared to major competitors. This initial device offers lower total gate charge with much shorter switching plateau time, which helps reduce switching losses.
 

The AOTF190A60L is packaged in a full-moulded TO-220F and has a maximum R_{DS (ON)} of 190mΩ.

According to the company, αMOS5 was engineered to provide superior EMI performance by optimising parasitic parameter behaviour. The EMI is controlled with a suppressed reverse recovery current (Irr) and a smoother voltage ramp-up during the device turn off.

“MOSFET performance is critical to achieving the highest efficiency provided by the power converters,” says Simon Lu, marketing director of HV MOSFET, at Alpha and Omega Semiconductor. “The [αMOS5] technology platform targets high efficiency solutions in both power factor correction (PFC) and LLC (two inductor, one capacitor) applications,” said Simon Lu, Marketing Director of HV MOSFET product line at AOS.

The AOTF190A60L is available now in production quantities with a lead-time of 12-14 weeks.