Power_electronics Features

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Power Electronics Europe News
350V eGaN transistor reduces space requirements

It can be used in multi-level converters, EV charging, solar power inverters, and motor drives.

The 350V GaN transistor has a maximum RDS(on) of 65mΩ and a 26A pulsed output current. It can be also be used in three-level, 400V input to 48V output LLC converters for telecomms or server power supplies, advises the company.

The transistor is just 1.95 x 1.95mm (3.72mm2) enabling the efficient half bridge with gate driver to occupy five times less area than a comparable silicon solution, claims the company. Despite its small size, the transistor is claimed to handle thermal conditions more efficiently than plastic packaged MOSFETs.

The EPC9084 development board is also available. It is a 350V maximum device voltage, half bridge featuring the EPC2050, and Silicon Labs’ Si8274GB1-IM gate driver.  The board measures 51 x 38mm and contains all critical components for evaluation of the 350V eGaN FET.

The EPC2050 eGaN FET and the EPC9084 development board are available for immediate delivery from Digi-Key.


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