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STMicroelectronics bases 650V HF IGBTs on TFS technology

Efficiency and performance gains for power factor correction (PFC) converters, uninterruptible power supplies (UPS) solar inverters and welders are delivered by the HB2 650V IGBT series, says the company.


The IGBTs use its latest Trench Field Stop (TFS) technology and the series includes automotive-eligible devices meeting AEC-Q101 Rev. D.


The IGBTs conduction performance is enhanced by low VCEsat of 1.55V. Dynamic behaviour is enhanced due to reduced gate charge that enables fast switching at low gate current. The thermal performance helps maximise reliability and power density, adds the company.


The IGBTs can be specified with either a full-rated or half-rated diode, or a protection diode to prevent accidental reverse bias. This way, says the company, designers can optimise the IGBT’s behaviour for specific application needs.


The first devices to be released is the 40A STGWA40HP65FB2. It is available now in the TO-247 long-lead package.


Visit ST Microelectronics PCIM Europe 9-419



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