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Power Electronics Europe News
Power Integrations boosts efficiency in GaN InnoSwitch3 ICs
The ICs feature up to 95% efficiency across the full load range and up to 100W in enclosed adapter implementations without requiring a heatsink. The performance increase is achieved using an internally developed high-voltage GaN switch technology.


The company expects the conversion from silicon to GaN technology to be fast. It has been offering InnoSwitch3 for 18 months to the offline switcher IC market and says that these introductions advance both the efficiency and power capability of the company’s flyback products.


The quasi-resonant InnoSwitch3-CP, InnoSwitch3-EP and InnoSwitch3-Pro ICs combine primary, secondary and feedback circuits in a single surface-mounted package. GaN switches are used in place of the traditional silicon high-voltage transistors on the primary side of the IC to reduce conduction losses when current is flowing. This also reduces switching losses during operation, notes the company for less energy waste and increased efficiency and power delivery from the small  InSOP-24D package.


The ICs provide accurate CV/CC/CP, independent of external components, says the company, for use in high-efficiency flyback designs, such as USB-PD and high-current chargers or adapters for mobile devices, set-top boxes, displays, appliances, networking and gaming products. They also easily interface to fast-charging protocol ICs. The InnoSwitch3-CP and ‑EP variants are hardware-configurable, and the InnoSwitch3-Pro has a digital interface for software control of CV and CC set points, exception handing and safety-mode options.


The latest InnoSwitch 3 ICs are available now. There are five reference designs  available, describing USB-PD chargers from 60 to 100W and the PI Expert automated design tool.



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