Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
More details...
AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
More details...
Power Electronics Europe News
Chipset by Efficient Power Conversion (EPC) �redefines power conversion�
Intended for high power density applications including 48V DC/DC conversion and motor drives, the 100V, 65A IC chipset can be used in high-density computing applications and in 48V brushless DC (BLDC) motor drives for e-mobility, robotics and drones.

Integrated in the chipset are the EPC23101 eGaN IC with an EPC2302 eGaN FET. It is capable of a maximum withstand voltage of 100V, delivering up to 65A load current, while capable of switching speeds greater than 1MHz, says the company.

The EPC23101 IC is based on the company’s proprietary GaN IC technology and offers integrated 3.3mΩ RDS(on) high side FET with gate driver, input logic interface, level shifting, bootstrap charging, gate drive buffer circuits and gate driver output to drive external low side eGaN FET

The EPC2302 eGaN FET offers a super small RDS(on), of just 1.8mΩ, together with very small QG, QGD and QOSS parameters for low conduction and switching losses.

Both devices feature a thermally enhanced QFN package with exposed top with optimized pinout between the two devices. The combined chipset footprint, is 7.0 x 5.0mm; this offers an “extremely small solution size for the highest power density applications” says the company.

When operated in a 48 to 12V buck converter, the EPC23101 EPC2302 chipset delivers 96% efficiency at 1MHz switching frequency and 97% efficiency at 500kHz switching frequency. It can deliver 65A with less than 50°C temperature rise.

The ePower family is designed to make it easy for designers to exploit the advantages of GaN technology, says EPC with the advantages of integrated devices which are easier to design, easier to layout, easier to assemble, and which save space on the PCB and increase efficiency.

“Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced design engineering required,” says Alex Lidow, CEO and co-founder of EPC. “From the serenity or control environment of digital and analogue controllers, the ePower Chipset translates the PWM command signals to high voltage and high current waveforms capable of driving real world loads”.

The ePower Chipset can reduce the weight and increase precision in battery-operated BLDC motor drives for e-mobility, robotic arms and drones, he continues. They are also capable of higher efficiency 48V input DC/DC converters for data centre, datacomms, artificial intelligence, solar MPPT and other industrial and consumer applications, Lidow continues.

The EPC90142 development board to evaluate the ePower Stage chipset, is a 100V maximum device voltage, 65A maximum output current, half bridge featuring the EPC23101 integrated ePower FET and EPC2302 eGaN FET. The board measures 2.0 x 2.0 inches or 50.8 x 50.8mm and contains all critical components, says the company.

View PDF
Go Back   
Newsletter sign up