Power_electronics Features

A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Power Electronics Europe News
EPC to Provide eGaN devices in wafer form
EFficient Power Conversion (EPC)'s eGaN field-effect transistors (FETs) and integrated circuits (ICs) are traditionally sold as singulated chip-scale devices with solder bars or solder bumps, but chip-scale packaging reduces the resistance, inductance, size, thermal impedance, and cost of power transistors.

By offering these devices in wafer form allows for easier integration in customer power system sub-assemblies, says the company, further reducing device interconnect inductances and the interstitial space needed on the PCB to increase both efficiency and power density while reducing assembly costs.

The GaN products in wafer form can accommodate a variety of assembly techniques and applications, says the company, which is offering eGaN power devices in wafer form either with or without solder bumps. 

Extra services such as wafer thinning, metallisation of the wafer backside, and application of backside coating tape are also available.




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