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A New Approach to Circuit Breaker Design Using Silicon Carbide Switches - Nov 21
Mechanical circuit breakers can be low cost with minimal losses, but they operate slowly and wear out. Solid state versions overcome the problems and are becoming increasing viable as replacements at...
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Power Electronics Europe News
 
650V aGaN transistor family serves high efficiency designs
The aGaN 650V transistor from Alpha and Omega Semiconductor is designed for high efficiency and high-density power supplies in the telecomms, server, and consumer adapter markets. These high-efficiency server power supplies reduce cooling requirements, maximise rack area, and minimise the associated energy cost, claims the company.

 

The 70mΩ pure enhancement mode device is manufactured on a qualified GaN-on-Si substrate technology that has in excess of 50% smaller die area, 10x lower gate charge (Qg), and eliminates the body diode reverse recovery charge (Qrr) of traditional silicon MOSFET technology. Additionally, the company’s aGaN technology’s low on-state gate leakage allows engineers to drive the transistor with a selection of commercially available Si MOSFET gate drivers.  

 

The 650V transistor is available in a low inductance thermally enhanced DFN8x8 package, which has a large thermal pad for heat removal and a separate driver sense pin for controllable switching speed.

 

 

 

 



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