Power_electronics Features

Comparing N-Channel and P-Channel MOSFETs: Which is best for your application?
This article compares the n-channel and p-channel power MOSFETs, introduces the complete Littelfuse p-channel power MOSFETs portfolio, and explores target applications.
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AC/DC power factor correction module offers up to 1,512W
A full brick package developed by TDK-Lambda, the PF1500B-360, is for high voltage distributed power architectures
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Power Electronics Europe News
24V dual-channel, low side driver is versatile, says Infineon Technologies
The latest addition to the EiceDRIVER range is a 24V dual-channel, low side gate driver with an integrated thermal pad. The 2ED24427N01F can be operated with high switching frequencies as well as highest peak output currents. It also offers an enable function.

The gate driver is suitable for high switching frequencies, such as power factor correction and synchronous rectification, as a transformer driver or a buffer driver for parallel MOSFET applications or high-current IGBT modules, such as the company’s EasyPACK and EconoPACK.

The gate driver provides a symmetrical output stage with 10A source and sink drive capability with integrated under-voltage lockout (UVLO) protection and logic level enable control.

It is available in a DSO-8 package with a thermally efficient and exposed power pad. Propagation delays are 55ns and there is 450mΩ (max) source and sink on resistance per channel to enable high switching frequencies with reduced power transistor switching losses.

The integrated thermal pad offers low thermal resistance which is claimed to enable reliable operation at lower temperatures under high current conditions or at higher switching frequencies. The gate driver is rated for industrial temperature grade operation.

The EiceDRIVER 2ED24427N01F can be ordered now in an industry-standard DSO-8 (SOIC-8) package with a thermal pad and 2 kV HBM ESD ratings.

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