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MOSFET achieves low power loss for USB Type-C interface designs

Described as robust and versatile, the AONR21357 is the initial product in the family and is designed for USB PD load switch applications. It uses the improved P-Channel MOSFET process to achieve low power loss and reliable start-up, says the company. It is designed for USB PD load switch applications with extended input voltage range.

The MOSFET is rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage.  It features a maximum on resistance (RDSON) of 12.3m under VGS at -4.5V. It also features a thermally enhanced 3.0 x 3.0mm DFN package.  According to the company, the  MOSFET is particularly suitable for load switch applications in notebook adapter-in/ battery in sockets.

As USB Type-C is becoming the de-facto interface for PCs and mobile products, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy. This MOSFET,  used as the load switch, offers extended I/O voltage range and designed to accommodate the possible working conditions. The enhanced P-Channel technology permits linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.

It is targeted to address the need for -30VDS and -25VGS discrete P-Channel MOSFETs and the final family will be offered in SO-8 and two DFN (3.0 x 3.0 and 5.0 x 6.0mm) package options. 

The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks.



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