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First integrated half-bridge GaN IC is announced

Claiming to have solved a 30 year industry challenge, the proprietary AllGaN half-bridge GaN Power IC with iDrive monolithically integrates functions required to deliver switching speeds of up to 2MHz and enable a dramatic reduction in size, cost and weight while delivering faster charging.

Half-bridge circuits are used in everything from smartphone chargers and laptop adapters, to TVs, solar panels, data centres and electric vehicles (EVs). According to the company, older silicon-based half-bridge components have slow switching and parasitic power losses, which slows speeds by up to a factor of 30.

The first half-bridge GaN Power IC is the 650V-rated NV6250, It is offered in a 6.0 x 8.0mm QFN complete with dual drivers, level shifter, dual 560mOhm power FETs, bootstrap circuit and protection features. Simple, low-power digital PWM inputs switch the half-bridge at all frequencies. It is compatible with a range of analogue and digital controllers from multiple IC partners.

The company has been working with partners to create the next generation of adapters and chargers.

Samples and demonstration boards for the NV6250 are available immediately to qualified customers, with production planned for Q2, 2017.

 

 



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