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New Developments in RET Technology - Feb/March 2021
Resistor-Equipped Transistors (RETs) also known as digital transistors or pre-bias transistors offer many benefits, including saving space, reducing manufacturing costs and increased...
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Power Electronics Europe News
 
EGaN development board verifies smaller size with high density

The board has a 30V maximum device voltage with a 50A maximum output current. In this application, two 30V EPC2100 eGaN ICs operate in parallel with a single onboard gate driver to achieve higher output currents. According to the company, GaN devices have superior current sharing capability compared to silicon MOSFETs, making them more attractive for parallel operation. The total system efficiency of this board operating with 12V input to 1V output with a switching frequency of 1MHz peaks near 90%. It runs with natural convection and no heatsink up to 32A, and at heavy load condition of 40A showed a 2.5% efficiency advantage over silicon-based DrMOS solutions, which translates to an almost 20% reduction in total system power loss.

The company was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as replacements for power MOSFETs in applications such as DC/DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and Class-D audio amplifiers.

 


 



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